Semiconductors
IXTA1R4N120P IXYS Inventory and RFQ Quote
MOSFET 1.4 Amps 1200V 15 Rds IXTA1R4N120P IXYS D²PAK / TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IXTA1R4N120P
- Brand
- IXYS
- Qty
- 584000
- Package
- D²PAK / TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 1.4 Amps 1200V 15 Rds
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 1.2 kV
- Transistor Polarity: N-Channel
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 4.5 V
- Width: 10.41 mm
- Qg - Gate Charge: 24.8 nC
- Vgs - Gate-Source Voltage: 20 V
- Type: Polar Power MOSFET
- Fall Time: 29 ns
- Mounting Style: SMD/SMT