Semiconductors
IXFN60N60 IXYS Inventory and RFQ Quote
MOSFET 600V 60A IXFN60N60 IXYS SOT-227 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IXFN60N60
- Brand
- IXYS
- Qty
- 536000
- Package
- SOT-227
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 600V 60A
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- NRND: Not recommended for new designs.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: SOT-227-4
- Vgs th - Gate-Source Threshold Voltage: 4.5 V
- Width: 25.42 mm
- Qg - Gate Charge: 380 nC
- Vgs - Gate-Source Voltage: 20 V
- Type: HiPerFET Power MOSFET
- Fall Time: 26 ns
- Mounting Style: Chassis Mount