Power
IRFHM830TRPBF Infineon Technologies Inventory and RFQ Quote
MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms IRFHM830TRPBF Infineon Technologies Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IRFHM830TRPBF
- Brand
- Infineon Technologies
- Qty
- 537000
- Package
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Package / Case: PQFN-8
- Vgs th - Gate-Source Threshold Voltage: 1.8 V
- Width: 3.3 mm
- Qg - Gate Charge: 31 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: SP001566782
- Type: HEXFET Power MOSFET
- Fall Time: 9.2 ns