Power
IRF512 Harris Corporation Inventory and RFQ Quote
100V 4.9A 43W 740mΩ@3.4A,10V 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS IRF512 Harris Corporation TO-220 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IRF512
- Brand
- Harris Corporation
- Qty
- 534000
- Package
- TO-220
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
100V 4.9A 43W 740mΩ@3.4A,10V 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 4.9A
- Power Dissipation (Pd): 43W
- Drain Source On Resistance (RDS(on)@Vgs: 740mΩ@3.4A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 135pF@25V
- Total Gate Charge (Qg@Vgs): 7.7nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)