Power
IRF40H233ATMA1 Infineon Technologies Inventory and RFQ Quote
40V 65A 6.2mΩ@35A,10V 3.9V@50uA 2 N-Channel TDSON-8 MOSFETs ROHS IRF40H233ATMA1 Infineon Technologies Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IRF40H233ATMA1
- Brand
- Infineon Technologies
- Qty
- 550000
- Package
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
40V 65A 6.2mΩ@35A,10V 3.9V@50uA 2 N-Channel TDSON-8 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 65A
- Power Dissipation (Pd): 3.8W
- Drain Source On Resistance (RDS(on)@Vgs: 6.2mΩ@35A
- Gate Threshold Voltage (Vgs(th)@Id): 3.9V@50uA
- Type: 2 N
- Input Capacitance (Ciss@Vds): 2.2nF@20V
- Total Gate Charge (Qg@Vgs): 57nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)