Power
IRF331 Harris Corporation Inventory and RFQ Quote
350V 5.5A 1Ω@3A,10V 75W 4V@250uA 1PCSNChannel TO-3 MOSFETs ROHS IRF331 Harris Corporation TO-3 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IRF331
- Brand
- Harris Corporation
- Qty
- 524000
- Package
- TO-3
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
350V 5.5A 1Ω@3A,10V 75W 4V@250uA 1PCSNChannel TO-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 350V
- Continuous Drain Current (Id): 5.5A
- Drain Source On Resistance (RDS(on)@Vgs: 1Ω@3A
- Power Dissipation (Pd): 75W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 700pF@25V
- Total Gate Charge (Qg@Vgs): 35nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)