Power
IRF2807STRRPBF Infineon Technologies Inventory and RFQ Quote
MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC IRF2807STRRPBF Infineon Technologies Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IRF2807STRRPBF
- Brand
- Infineon Technologies
- Qty
- 591000
- Package
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- NRND: Not recommended for new designs.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 75 V
- Transistor Polarity: N-Channel
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 4 V
- Width: 6.22 mm
- Qg - Gate Charge: 160 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: SP001564670
- Type: HEXFET Power MOSFET
- Fall Time: 48 ns