Semiconductors
IPW60R199CP Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP IPW60R199CP Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPW60R199CP
- Brand
- Infineon Technologies
- Qty
- 588000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- NRND: Not recommended for new designs.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-247-3
- Vgs th - Gate-Source Threshold Voltage: 2.5 V
- Width: 5.21 mm
- Qg - Gate Charge: 43 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPW60R199CPFKSA1 IPW6R199CPXK SP000089802
- Fall Time: 5 ns
- Mounting Style: Through Hole