Semiconductors
IPU80R1K0CE Infineon Technologies Inventory and RFQ Quote
800V 5.7A 950mΩ@10V,3.6A 83W 3.9V@250uA 1 N-Channel TO-251-3 MOSFETs ROHS IPU80R1K0CE Infineon Technologies IPAK / TO-251 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPU80R1K0CE
- Brand
- Infineon Technologies
- Qty
- 549000
- Package
- IPAK / TO-251
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
800V 5.7A 950mΩ@10V,3.6A 83W 3.9V@250uA 1 N-Channel TO-251-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 800V
- Continuous Drain Current (Id): 5.7A
- Drain Source On Resistance (RDS(on)@Vgs: 950mΩ@10V
- Power Dissipation (Pd): 83W
- Gate Threshold Voltage (Vgs(th)@Id): 3.9V@250uA
- Type: 1 N