Power
IPP60R385CP Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 650V 9A TO220-3 CoolMOS CP IPP60R385CP Infineon Technologies TO-220 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPP60R385CP
- Brand
- Infineon Technologies
- Qty
- 513000
- Package
- TO-220
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET N-Ch 650V 9A TO220-3 CoolMOS CP
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- NRND: Not recommended for new designs.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-220-3
- Vgs th - Gate-Source Threshold Voltage: 2.5 V
- Width: 4.4 mm
- Qg - Gate Charge: 22 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPP60R385CPXKSA1 IPP6R385CPXK SP000082281
- Fall Time: 5 ns
- Mounting Style: Through Hole