Semiconductors
IPP60R080P7 Infineon Technologies Inventory and RFQ Quote
650V 37A 80mΩ@10V,11.8A 129W 4V@590uA 1PCSNChannel TO-220-3 MOSFETs ROHS IPP60R080P7 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPP60R080P7
- Brand
- Infineon Technologies
- Qty
- 545000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
650V 37A 80mΩ@10V,11.8A 129W 4V@590uA 1PCSNChannel TO-220-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 37A
- Drain Source On Resistance (RDS(on)@Vgs: 80mΩ@10V
- Power Dissipation (Pd): 129W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@590uA
- Type: 1 N