Semiconductors
IPP126N10N3 G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3 IPP126N10N3 G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPP126N10N3 G
- Brand
- Infineon Technologies
- Qty
- 582000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: TO-220-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 4.4 mm
- Qg - Gate Charge: 35 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPP126N10N3GXKSA1 IPP126N1N3GXK SP000683088
- Fall Time: 5 ns
- Mounting Style: Through Hole