Semiconductors
IPP111N15N3 G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3 IPP111N15N3 G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPP111N15N3 G
- Brand
- Infineon Technologies
- Qty
- 577000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 150 V
- Transistor Polarity: N-Channel
- Package / Case: TO-220-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 4.4 mm
- Qg - Gate Charge: 55 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPP111N15N3GXK IPP111N15N3GXKSA1 SP000677860
- Fall Time: 9 ns
- Mounting Style: Through Hole