Semiconductors
IPP093N06N3G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 60V 50A TO220-3 OptiMOS 3 IPP093N06N3G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPP093N06N3G
- Brand
- Infineon Technologies
- Qty
- 579000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 60V 50A TO220-3 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel
- Package / Case: TO-220-3
- Vgs th - Gate-Source Threshold Voltage: 4 V
- Width: 4.4 mm
- Qg - Gate Charge: 36 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPP093N06N3GXKSA1 IPP93N6N3GXK SP000680852
- Type: OptiMOS 3 Power-Transistor
- Fall Time: 5 ns