Semiconductors
IPL60R125P7AUMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET HIGH POWER_NEW IPL60R125P7AUMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPL60R125P7AUMA1
- Brand
- Infineon Technologies
- Qty
- 538000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET HIGH POWER_NEW
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: VSON-4
- Vgs th - Gate-Source Threshold Voltage: 3 V
- Qg - Gate Charge: 36 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPL60R125P7 SP001657416
- Fall Time: 6 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET