Semiconductors
IPI024N06N3 G Infineon Technologies Inventory and RFQ Quote
60V 120A 1.8mΩ@10V,100A 250W 3V@196uA 1PCSNChannel TO-262-3 MOSFETs ROHS IPI024N06N3 G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPI024N06N3 G
- Brand
- Infineon Technologies
- Qty
- 584000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 120A 1.8mΩ@10V,100A 250W 3V@196uA 1PCSNChannel TO-262-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 120A
- Drain Source On Resistance (RDS(on)@Vgs: 1.8mΩ@10V
- Power Dissipation (Pd): 250W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@196uA
- Reverse Transfer Capacitance (Crss@Vds): 120pF@30V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 17nF@30V
- Total Gate Charge (Qg@Vgs): 206nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)