Semiconductors
IPG20N10S436AATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-CHANNEL 100+ IPG20N10S436AATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPG20N10S436AATMA1
- Brand
- Infineon Technologies
- Qty
- 506000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-CHANNEL 100+
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 31 mOhms, 31 mOhms
- Package / Case: TDSON-8
- Vgs th - Gate-Source Threshold Voltage: 2.7 V
- Width: 5.15 mm
- Qg - Gate Charge: 9.4 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPG20N10S4-36A SP001102930
- Fall Time: 4 ns