Semiconductors
IPD90N10S4L06ATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET MOSFET IPD90N10S4L06ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD90N10S4L06ATMA1
- Brand
- Infineon Technologies
- Qty
- 523000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET MOSFET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 5.8 mOhms
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 1.1 V
- Width: 6.22 mm
- Qg - Gate Charge: 98 nC
- Vgs - Gate-Source Voltage: 16 V
- Part # Aliases: IPD90N10S4L-06 SP000866562
- Fall Time: 40 ns