Semiconductors
IPD80R600P7 Infineon Technologies Inventory and RFQ Quote
800V 8A 60W 600mΩ@10V,3.4A 3.5V@170uA 1PCSNChannel TO-252-3 MOSFETs ROHS IPD80R600P7 Infineon Technologies DPAK / TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD80R600P7
- Brand
- Infineon Technologies
- Qty
- 552000
- Package
- DPAK / TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
800V 8A 60W 600mΩ@10V,3.4A 3.5V@170uA 1PCSNChannel TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 800V
- Continuous Drain Current (Id): 8A
- Power Dissipation (Pd): 60W
- Drain Source On Resistance (RDS(on)@Vgs: 600mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@170uA
- Type: 1 N