Semiconductors
IPD80R1K0CE Infineon Technologies Inventory and RFQ Quote
800V 5.7A 800mΩ@10V,3.6mA 83W 3V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS IPD80R1K0CE Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD80R1K0CE
- Brand
- Infineon Technologies
- Qty
- 539000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
800V 5.7A 800mΩ@10V,3.6mA 83W 3V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 800V
- Continuous Drain Current (Id): 5.7A
- Drain Source On Resistance (RDS(on)@Vgs: 800mΩ@10V
- Power Dissipation (Pd): 83W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Type: 1 N
- Input Capacitance (Ciss@Vds): 785pF@100v
- Total Gate Charge (Qg@Vgs): 31nC@0~10V
- Operating Temperature: -55℃~+150℃@(Tj)