Semiconductors
IPD70N12S311ATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET MOSFET_(120V,300V) IPD70N12S311ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD70N12S311ATMA1
- Brand
- Infineon Technologies
- Qty
- 508000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET MOSFET_(120V,300V)
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 120 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 9.2 mOhms
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Moisture Sensitive: Yes
- Qg - Gate Charge: 65 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPD70N12S3-11 SP001400108
- Fall Time: 8 ns