Semiconductors
IPD65R380E6ATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET LOW POWER_LEGACY IPD65R380E6ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD65R380E6ATMA1
- Brand
- Infineon Technologies
- Qty
- 518000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET LOW POWER_LEGACY
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- NRND: Not recommended for new designs.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 650 V
- Transistor Polarity: N-Channel
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 2.5 V
- Width: 6.22 mm
- Qg - Gate Charge: 39 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPD65R380E6 SP001117736
- Fall Time: 8 ns
- Mounting Style: SMD/SMT