Semiconductors
IPD60N10S4L-12 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 100V 60A DPAK-2 IPD60N10S4L-12 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD60N10S4L-12
- Brand
- Infineon Technologies
- Qty
- 595000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 100V 60A DPAK-2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 9.8 mOhms
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 1.1 V
- Width: 6.22 mm
- Qg - Gate Charge: 49 nC
- Vgs - Gate-Source Voltage: 16 V
- Part # Aliases: IPD60N10S4L12ATMA1 IPD6N1S4L12XT SP000866550
- Fall Time: 21 ns