Semiconductors
IPD50R650CE Infineon Technologies Inventory and RFQ Quote
500V 6.1A 650mΩ@13V,1.8A 69W 3.5V@150uA 1PCSNChannel TO-252-3 MOSFETs ROHS IPD50R650CE Infineon Technologies DPAK / TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD50R650CE
- Brand
- Infineon Technologies
- Qty
- 530000
- Package
- DPAK / TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
500V 6.1A 650mΩ@13V,1.8A 69W 3.5V@150uA 1PCSNChannel TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 6.1A
- Drain Source On Resistance (RDS(on)@Vgs: 650mΩ@13V
- Power Dissipation (Pd): 69W
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@150uA
- Type: 1 N