Semiconductors
IPD50N10S3L16 Diodes Incorporated Inventory and RFQ Quote
MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T IPD50N10S3L16 Diodes Incorporated TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD50N10S3L16
- Brand
- Diodes Incorporated
- Qty
- 526000
- Package
- TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 15 mOhms
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 1.2 V
- Width: 6.22 mm
- Qg - Gate Charge: 49 nC
- Vgs - Gate-Source Voltage: 10 V
- Part # Aliases: IPD50N10S3L16ATMA1 IPD5N1S3L16XT SP000386185
- Fall Time: 5 ns