Semiconductors
IPD320N20N3 G Infineon Technologies Inventory and RFQ Quote
200V 34A 136W 32mΩ@10V,34A 4V@90uA 1PCSNChannel TO-252-2 MOSFETs ROHS IPD320N20N3 G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD320N20N3 G
- Brand
- Infineon Technologies
- Qty
- 592000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
200V 34A 136W 32mΩ@10V,34A 4V@90uA 1PCSNChannel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 34A
- Power Dissipation (Pd): 136W
- Drain Source On Resistance (RDS(on)@Vgs: 32mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@90uA
- Type: 1 N