Semiconductors
IPD30N10S3L-34 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T IPD30N10S3L-34 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD30N10S3L-34
- Brand
- Infineon Technologies
- Qty
- 536000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 25.8 mOhms
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 1.2 V
- Width: 6.22 mm
- Qg - Gate Charge: 31 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPD30N10S3L34ATMA1 IPD3N1S3L34XT SP000261248
- Fall Time: 3 ns