Semiconductors
IPD30N08S222ATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 75V 30A DPAK-2 OptiMOS IPD30N08S222ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD30N08S222ATMA1
- Brand
- Infineon Technologies
- Qty
- 593000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 75V 30A DPAK-2 OptiMOS
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 75 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 17.4 mOhms
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 2.1 V
- Width: 6.22 mm
- Qg - Gate Charge: 57 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPD30N08S2-22 IPD3N8S222XT SP000252169
- Fall Time: 20 ns