Semiconductors
IPD30N06S2L23ATMA3 Infineon Technologies Inventory and RFQ Quote
MOSFET N-CHANNEL_55/60V IPD30N06S2L23ATMA3 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD30N06S2L23ATMA3
- Brand
- Infineon Technologies
- Qty
- 577000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-CHANNEL_55/60V
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 55 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 15.9 mOhms
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 1.6 V
- Width: 6.22 mm
- Qg - Gate Charge: 33 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 9 ns
- Mounting Style: SMD/SMT