Semiconductors
IPD30N03S4L-09 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2 IPD30N03S4L-09 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD30N03S4L-09
- Brand
- Infineon Technologies
- Qty
- 551000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 9 mOhms
- Package / Case: TO-252-3
- Width: 6.22 mm
- Vgs - Gate-Source Voltage: 16 V
- Part # Aliases: IPD30N03S4L09ATMA1 IPD3N3S4L9XT SP000415578
- Fall Time: 5 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET