Semiconductors
IPD200N15N3 G Infineon Technologies Inventory and RFQ Quote
150V 50A 150W 20mΩ@10V,50A 4V@90uA 1PCSNChannel TO-252-3 MOSFETs ROHS IPD200N15N3 G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD200N15N3 G
- Brand
- Infineon Technologies
- Qty
- 521000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
150V 50A 150W 20mΩ@10V,50A 4V@90uA 1PCSNChannel TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 50A
- Power Dissipation (Pd): 150W
- Drain Source On Resistance (RDS(on)@Vgs: 20mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@90uA
- Type: 1 N