Semiconductors
IPD180N10N3GBTMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 IPD180N10N3GBTMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD180N10N3GBTMA1
- Brand
- Infineon Technologies
- Qty
- 524000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 6.22 mm
- Qg - Gate Charge: 25 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: G IPD180N10N3 IPD18N1N3GXT SP000482438
- Fall Time: 5 ns
- Mounting Style: SMD/SMT