Transistor
IPD122N10N3 G Infineon Technologies Inventory and RFQ Quote
TO-252-3 MOSFETs ROHS IPD122N10N3 G Infineon Technologies Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD122N10N3 G
- Brand
- Infineon Technologies
- Qty
- 588000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): -
- Continuous Drain Current (Id): -
- Drain Source On Resistance (RDS(on)@Vgs: -
- Power Dissipation (Pd): -
- Gate Threshold Voltage (Vgs(th)@Id): -
- Reverse Transfer Capacitance (Crss@Vds): -
- Type: -
- Input Capacitance (Ciss@Vds): -
- Total Gate Charge (Qg@Vgs): -