Transistor
IPD110N12N3GATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET MV POWER MOS IPD110N12N3GATMA1 Infineon Technologies Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD110N12N3GATMA1
- Brand
- Infineon Technologies
- Qty
- 512000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
MOSFET MV POWER MOS
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 120 V
- Transistor Polarity: N-Channel
- Package / Case: PG-TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 6.22 mm
- Qg - Gate Charge: 49 nC
- Vgs - Gate-Source Voltage: 10 V
- Part # Aliases: G IPD110N12N3 SP001127808
- Fall Time: 8 ns
- Mounting Style: SMD/SMT