Transistor
IPD110N12N3 G Infineon Technologies Inventory and RFQ Quote
120V 75A 11mΩ@10V,75A 136W 4V@83uA 1PCSNChannel TO-252-3 MOSFETs ROHS IPD110N12N3 G Infineon Technologies Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD110N12N3 G
- Brand
- Infineon Technologies
- Qty
- 516000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
120V 75A 11mΩ@10V,75A 136W 4V@83uA 1PCSNChannel TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 120V
- Continuous Drain Current (Id): 75A
- Drain Source On Resistance (RDS(on)@Vgs: 11mΩ@10V
- Power Dissipation (Pd): 136W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@83uA
- Type: 1 N