Transistor
IPD082N10N3 G Infineon Technologies Inventory and RFQ Quote
100V 80A 8.2mΩ@10V,73A 125W 3.5V@75uA 1PCSNChannel TO-252-3 MOSFETs ROHS IPD082N10N3 G Infineon Technologies Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD082N10N3 G
- Brand
- Infineon Technologies
- Qty
- 539000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
100V 80A 8.2mΩ@10V,73A 125W 3.5V@75uA 1PCSNChannel TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 80A
- Drain Source On Resistance (RDS(on)@Vgs: 8.2mΩ@10V
- Power Dissipation (Pd): 125W
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@75uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Type: 1 N
- Input Capacitance (Ciss@Vds): -
- Total Gate Charge (Qg@Vgs): -
- Operating Temperature: -