Semiconductors
IPD050N10N5ATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET DIFFERENTIATED MOSFETS IPD050N10N5ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD050N10N5ATMA1
- Brand
- Infineon Technologies
- Qty
- 517000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET DIFFERENTIATED MOSFETS
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: DPAK-3
- Vgs th - Gate-Source Threshold Voltage: 2.2 V
- Moisture Sensitive: Yes
- Qg - Gate Charge: 64 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPD050N10N5 SP001602184
- Fall Time: 7 ns
- Mounting Style: SMD/SMT