Semiconductors
IPBE65R115CFD7A Infineon Technologies Inventory and RFQ Quote
650V 21A 103mΩ@10V,9.7A 114W 4V@490uA 1PCSNChannel TO-263-7 MOSFETs ROHS IPBE65R115CFD7A Infineon Technologies D²PAK / TO-263-7L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPBE65R115CFD7A
- Brand
- Infineon Technologies
- Qty
- 509000
- Package
- D²PAK / TO-263-7L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
650V 21A 103mΩ@10V,9.7A 114W 4V@490uA 1PCSNChannel TO-263-7 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 21A
- Drain Source On Resistance (RDS(on)@Vgs: 103mΩ@10V
- Power Dissipation (Pd): 114W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@490uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.95nF@400V
- Total Gate Charge (Qg@Vgs): 41nC@10V
- Operating Temperature: -40℃~+150℃@(Tj)