Semiconductors
IPB80N03S4L03ATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2 IPB80N03S4L03ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB80N03S4L03ATMA1
- Brand
- Infineon Technologies
- Qty
- 515000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 2 mOhms
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Width: 9.25 mm
- Qg - Gate Charge: 140 nC
- Vgs - Gate-Source Voltage: 16 V
- Fall Time: 13 ns
- Mounting Style: SMD/SMT