Semiconductors
IPB77N06S2-12 Infineon Technologies Inventory and RFQ Quote
55V 77A 9.5mΩ@10V,38A 158W 3V@93uA 1PCSNChannel TO-263 MOSFETs ROHS IPB77N06S2-12 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB77N06S2-12
- Brand
- Infineon Technologies
- Qty
- 514000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
55V 77A 9.5mΩ@10V,38A 158W 3V@93uA 1PCSNChannel TO-263 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 55V
- Continuous Drain Current (Id): 77A
- Drain Source On Resistance (RDS(on)@Vgs: 9.5mΩ@10V
- Power Dissipation (Pd): 158W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@93uA
- Reverse Transfer Capacitance (Crss@Vds): 120pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.77nF@25V
- Total Gate Charge (Qg@Vgs): 45nC@0~10V
- Operating Temperature: -55℃~+175℃@(Tj)