Semiconductors
IPB60R280P7 Infineon Technologies Inventory and RFQ Quote
650V 12A 214mΩ@10V,3.8A 53W 3.5V@190uA 1PCSNChannel TO-263-3 MOSFETs ROHS IPB60R280P7 Infineon Technologies D²PAK / TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB60R280P7
- Brand
- Infineon Technologies
- Qty
- 532000
- Package
- D²PAK / TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
650V 12A 214mΩ@10V,3.8A 53W 3.5V@190uA 1PCSNChannel TO-263-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 12A
- Drain Source On Resistance (RDS(on)@Vgs: 214mΩ@10V
- Power Dissipation (Pd): 53W
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@190uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Type: 1 N
- Input Capacitance (Ciss@Vds): 761pF@400V
- Total Gate Charge (Qg@Vgs): 18nC@0~10V
- Operating Temperature: -55℃~+150℃@(Tj)