Semiconductors
IPB60R180C7 Infineon Technologies Inventory and RFQ Quote
600V 13A 155mΩ@10V,5.3A 68W 3.5V@260uA 1PCSNChannel TO-263 MOSFETs ROHS IPB60R180C7 Infineon Technologies D²PAK / TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB60R180C7
- Brand
- Infineon Technologies
- Qty
- 529000
- Package
- D²PAK / TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
600V 13A 155mΩ@10V,5.3A 68W 3.5V@260uA 1PCSNChannel TO-263 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 13A
- Drain Source On Resistance (RDS(on)@Vgs: 155mΩ@10V
- Power Dissipation (Pd): 68W
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@260uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.08nF@400V
- Total Gate Charge (Qg@Vgs): 24nC@0~10V
- Operating Temperature: -55℃~+150℃@(Tj)