Semiconductors
IPB60R160P6 Infineon Technologies Inventory and RFQ Quote
650V 23.8A 144mΩ@10V,9A 176W 4V@750uA 1 N-Channel TO-263 MOSFETs ROHS IPB60R160P6 Infineon Technologies D²PAK / TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB60R160P6
- Brand
- Infineon Technologies
- Qty
- 594000
- Package
- D²PAK / TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
650V 23.8A 144mΩ@10V,9A 176W 4V@750uA 1 N-Channel TO-263 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 23.8A
- Drain Source On Resistance (RDS(on)@Vgs: 144mΩ@10V
- Power Dissipation (Pd): 176W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@750uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.08nF@100V
- Total Gate Charge (Qg@Vgs): 44nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)