Semiconductors
IPB200N25N3 G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 IPB200N25N3 G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB200N25N3 G
- Brand
- Infineon Technologies
- Qty
- 531000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 250 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 9.25 mm
- Qg - Gate Charge: 86 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB200N25N3GATMA1 IPB2N25N3GXT SP000677896
- Type: OptiMOS 3 Power-Transistor
- Fall Time: 12 ns