Semiconductors
IPB180P04P4L-02 Infineon Technologies Inventory and RFQ Quote
MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 IPB180P04P4L-02 Infineon Technologies TO252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB180P04P4L-02
- Brand
- Infineon Technologies
- Qty
- 516000
- Package
- TO252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 40 V
- Transistor Polarity: P-Channel
- Rds On - Drain-Source Resistance: 3.9 mOhms
- Package / Case: TO-263-7
- Vgs th - Gate-Source Threshold Voltage: 1.2 V
- Width: 9.25 mm
- Qg - Gate Charge: 220 nC
- Vgs - Gate-Source Voltage: 4.5 V
- Part # Aliases: IPB180P04P4L02ATMA1 IPB18P4P4L2XT SP000709460
- Fall Time: 119 ns