Semiconductors
IPB180N04S4-H0 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 IPB180N04S4-H0 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB180N04S4-H0
- Brand
- Infineon Technologies
- Qty
- 550000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 40 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 900 uOhms
- Package / Case: TO-263-7
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 9.25 mm
- Qg - Gate Charge: 225 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB180N04S4H0ATMA1 IPB18N4S4HXT SP000711248
- Fall Time: 49 ns