Semiconductors
IPB180N03S4LH0 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 IPB180N03S4LH0 Infineon Technologies TO-263-7 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB180N03S4LH0
- Brand
- Infineon Technologies
- Qty
- 532000
- Package
- TO-263-7
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 1.1 mOhms
- Package / Case: TO-263-7
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 9.25 mm
- Qg - Gate Charge: 176 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB180N03S4LH0ATMA1 IPB18N3S4LHXT SP000555050
- Fall Time: 41 ns