Semiconductors
IPB17N25S3-100 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 250V 17A D2PAK-2 IPB17N25S3-100 Infineon Technologies D²PAK / TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB17N25S3-100
- Brand
- Infineon Technologies
- Qty
- 546000
- Package
- D²PAK / TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 250V 17A D2PAK-2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 250 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 100 mOhms
- Package / Case: PG-TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 9.25 mm
- Qg - Gate Charge: 14 nC
- Vgs - Gate-Source Voltage: 10 V
- Part # Aliases: IPB17N25S3100ATMA1 IPB17N25S31XT SP000876560
- Fall Time: 1.2 ns