Semiconductors
IPB120P04P4L-03 Infineon Technologies Inventory and RFQ Quote
MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 IPB120P04P4L-03 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB120P04P4L-03
- Brand
- Infineon Technologies
- Qty
- 546000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 40 V
- Transistor Polarity: P-Channel
- Rds On - Drain-Source Resistance: 4.9 mOhms
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 1.2 V
- Width: 9.25 mm
- Qg - Gate Charge: 180 nC
- Vgs - Gate-Source Voltage: 4.5 V
- Part # Aliases: IPB120P04P4L03ATMA1 IPB12P4P4L3XT SP000842284
- Fall Time: 57 ns