Semiconductors
IPB120N06S4H1ATMA2 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 60V 120A D2PAK-2 IPB120N06S4H1ATMA2 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB120N06S4H1ATMA2
- Brand
- Infineon Technologies
- Qty
- 550000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 60V 120A D2PAK-2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 2.4 mOhms
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 4 V
- Width: 9.25 mm
- Qg - Gate Charge: 270 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB120N06S4-H1 IPB12N6S4H1XT SP001028782
- Fall Time: 15 ns